钛蚀刻剂是应用于半导体制作和薄膜微电子技术的选择性控制蚀刻剂。
钛蚀刻剂TFT设计用来蚀刻通常在微电子产品中作为连结层和阻挡层的蒸发法薄膜的蚀刻剂。这种蚀刻剂光刻胶匹配性良好、分辨率高、边下蚀现象低。
Titanium Etchant TFT designed for etching evaporated films commonly employed as bonding and
barrier layers in microelectronics. Excellent resolution, photo resist
compatibility, and minimal undercutting are readily achieved.
钛蚀刻剂TFTN用来蚀刻玻璃或SiO2基板上的Ti沉积膜。TFTN并不含氢氟酸。
Titanium Etchant TFTN,Intended for etching Ti films deposited on glass or SiO
2 substrates. TFTN does not contain hydrofluoric acid.
性质 | TFT | TFTN |
外观 | 澄清水溶液 | 澄清水溶液 |
PH | 1 | 1 |
闪点 | 不可燃 | 不可燃 |
贮存 | 室温 | 室温 |
有效期 | 1年 | 1年 |
毒性 | 强酸 | 强酸 |
蚀刻容器 | 聚乙烯/聚丙烯 | 聚乙烯/聚丙烯 |
温度 | 20~50℃ | 70~85℃ |
蚀刻速率 | 25 Å/秒,20℃ | 10 Å/秒,70℃ |
50 Å/秒,30℃ | 50 Å/秒,80℃ |
冲洗 | 水 | 水 |
*匹配光刻胶 | 正性和负性 | 正性和负性 |
金属 | —— | 除Al以外的大多数金属 |
*KPR/KMER/KTFR:PKP(Transene);AZ/RISTON/ETC.
PROPERTIES OF TRANSENE TITANIUM ETCHANT TFT
How do I increase the etch rate? | 1. The rate will approximately double with every 10°C increase in temperature. |
2. Increase the rate of stirring or agitation. |
How do I reduce the etch rate? | Adding 1 part deionized water to 2 parts etchant will reduce the etch rate approximately 50%. |
Do I need to dilute the etchant? | No, it is ready to use. |
How do I reduce undercutting? | Increase the rate of stirring or agitation. |
Appearance | Clear, colorless |
pH | Strongly acidic |
Etch Rate at 20°C | 25 Å/sec. |
Etch Capacity (rate declines at ~70%) | 65 g/gallon |
Shelf Life | 1 year |
Storage Conditions | Ambient |
Filtration | 0.2 um |
Recommended Operating Temperatures | 20-80oC (30-40oC most common) |
Rinse | Deionized water |
Photoresist Recommendations | KLT6000 Series, KLT 5300 Series, HARE SQ (SU-8 type), TRANSIST, or PKP-308PI |
Select Compatible Materials | Au, Cu, Ni, Cr |
Select Incompatible Materials | Glass, oxide, nitride, GaAs |
Compatible Plastics | HDPE, PP, Teflon, PFA, PVC |
Country of Origin | USA |
Packaging | HDPE |
Isotropy | Isotropic |
Incompatible Chemicals | Strong bases |
Additional Information | Contains HF! |