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碳金刚石,膜, C, 0.002mm厚, Silicon基底
碳金刚石,膜, C, 0.002mm厚, Silicon基底图片
品牌:Goodfellow
产地:英国


产品介绍

Polycrystalline diamond film is prepared by a chemical vapour deposition (CVD) process, the diamond film being supported on a suitable substrate of a given orientation - generally a high purity  silicon wafer is used.  Alternatively, depending  upon the thickness of the film, it can be free standing.  Generally, the surface finish of the material is "as deposited", although the  material can be supplied lapped or polished, at extra cost. The thermal conductivity, grain size, transparency and surface roughness depend upon the thickness of the CVD polycrystalline diamond film.    For prices or for a quotation for other diamond films please fax your requirements to our Technical Service department who will be pleased to help you.

订货号包装规格
Sizes
432-144-0825mm x 25mm

产品参数

Description[描述]Ultrananocrystalline Diamond (UNCD)
Grade[等级]AQUA 25
Substrate[基底]Silicon
Thickness[厚度]0.002mm

其他参数

公差

直径<100mm±1mm
≥100mm+2% / -1%
厚度
±20%
长度 1<100mm±1mm
≥100mm+2% / -1%
长度 2<100mm±1mm
≥100mm+2% / -1%
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